Weebit Nano and Leti file two new patents optimising ReRAM performance

21 December 2020 - Weebit Nano Limited (ASX: WBT), the Israel-based semiconductor company seeking to develop and commercialise the next generation of memory technology, in conjunction with its development partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, are pleased to announce that they recently filed two new patents related to Weebit Nano’s Silicon Oxide (SiOx) ReRAM technology.

The first patent defines a process improvement to enable high memory yield and high uniformity across memory cells and throughout wafer. Such methods of increasing production yield are at the cornerstone of the semiconductor fab industry, underpinning low-cost manufacturing and maximising margins and profits.

The second patent relates to the selector development with a very fast read, which enables reduced power consumption and reduced selector stress during the read operation.

Coby Hanoch, CEO of Weebit Nano, said: “Weebit is continuing to build its IP portfolio as it moves closer to first commercialisation, filing two new patents to protect our technology and enhance the IP value for our licensees. Together with our strategic partner Leti, we have filed eight patents over the past two years. The recent capital raisings support accelerated research and development that is expected to generate additional patents as we progress towards production.