Weebit Nano continues ReRAM innovation: Files new patents optimising programming of ReRAM

5 March 2021 – Weebit Nano Limited (ASX: WBT), a leading developer of next generation memory technologiesfor the global semiconductor industry, is pleased to announce that it has filed two new patents to further protectthe intellectual property of its silicon oxide (SiOx) ReRAM technology. These new patents describe significant improvements to the programming of ReRAM, further extending some of the already-known advantages of Weebit’s ReRAM technology.

The programming of non-volatile memories (NVM) had continuously been a challenge, resulting in prolonged access times, high power consumption and reduced endurance. Weebit’s ReRAM technology tackled these drawbacks by supporting a simple programming method, requiring sophisticated analog circuits. With the recently filed patents, applicable to a wide variety of ReRAM technologies, Weebit paves the way to even more efficient programming methods, which enhance these advantages by up to a factor of two while increasing memory endurance.

The first patent describes unique chip circuitries that operate in tandem to optimise the access time and power associated with programming the memory module, while enhancing bit performance. The second patent, also deeply embedded in the chip circuitry, expands the concurrency of ReRAM programming beyond what emerging NVMs support today, resulting in doubling memory access speed.

Coby Hanoch, CEO of Weebit Nano, said: “We are proud to continue leading the innovation trend in the ReRAM ecosystem. As we make progress towards taping out our first ReRAM memory module, planned for the middle of this year, we are further enhancing our intellectual property with unique design-related patents. These patents are game changers for some applications, supporting Weebit’s focused efforts towards achieving a first commercial agreement.”

This announcement has been authorised for release by the Board of Weebit Nano Limited